1. gate 2. drain 3. source pin definition: r ds(on) < 0. 8 0 ? @ v gs =10v fast switching capability low gate charge lead free in compliance with eu rohs directive. green molding compound block diagram case: to-220,ito-220,to-262,to-263 package d g s parameter symbol ratings unit drain-source voltage v dss 600 v gate-source voltage v gss 30 v continuous drain curr ent i d 1 2 a pulsed drain c urrent (note 2) i dm 4 8 a avalanche ene r gy single pulsed (note 3) e as 7 9 0 mj power dissipation to-220 /to-262/to-263 p d 225 w ito-220 5 1 w junction te mperature t j +150 c operating temperatur e t opr -55 ~ +150 c storage temperature t stg -55 ~ +150 c notes: 1. absolute ma ximum ratings are those values be yond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repetitive rating : pulse width limited by t j 3. l = 3 0 mh, i as = 7.1 a, v dd = 50v, r g = 25 ?, st arting t j = 25c ordering information part no. package packing to-220 50pcs / tube ito-220 50pcs / tube to-2 62 50pcs / tube to-2 63 50pcs / tube features mechanical data 12n60t 12N60F 12n60g 12n60k 12n60 series n-channel power mosfet maximum ratings t a = 25 c unless otherwise specified
thermal dat a electrical chara cteri stics (t c =25c, unless oth e rwise specified) parameter symbol rating unit junction to ambient to-220/ i to-220 to-262/to-263 ja 62.5 c/w junction to case to-220 /to-262/to-263 jc 0. 56 c/w i to-220 2.6 paramet er symbol t es t conditions typmin max unit off chara c teristics drain-source breakdo w n voltage bv dss gs v =0v, i d =250 a 600 v drain-s ource l eaka ge current i dss gate- source leaka ge current forward i gss v g= 30v, v ds =0v 100 na reverse v gs =- 30v, v ds =0v -100 na on chara c teristics gate t h reshold voltag e v gs ( th ) ds v =v gs , i d = 250 a 2.0 4.0 v static drain-source on-state resistance r ds ( on ) 0.6 0 0. 8 0 ? dynami c ch aracteristics input capacita nce c iss v ds =25v, v gs =0v, f=1.0 mhz 1 48 0 pf output capacitance c oss pf 200 reverse t r ansfer capac itance c rss 25 pf switching char a cteristics turn-on delay time t d( on ) 30 ns turn-on rise t ime t r ns 115 turn-off delay time t d( off ) 95 ns turn-off fall t ime t f 85 ns t o tal gate charge q g 4 2 nc gate-source c harg e q gs nc 8.6 gate-drain charge q gd 21 nc drain-sour ce diode cha racteristics and maximum ratings drain-source diode forward voltage v sd 1.4 v maximum continuous drai n-source diode forward current i s 1 2 a maximum pulsed drai n-so urce diode forward current i sm 4 8 a reverse recovery t ime t rr v gs =0v, i s = 1 2 a, di f /dt = 100 a/ s (note 1) 570 ns reverse recover y charge q rr c 5 .5 notes: 1. pulse t est: pulse width 300 s, duty cycle 2%. 2. essentially independent of operating temperature. v dd =300v, i d = 1 2 a, r g =25 ? (note 1, 2) v ds =480v, i d = 1 2 a, v gs =10v (note 1, 2) v ds =600v, v gs =0v 1 a 9 * s =10v, i d = 6a gs v = 0 v, i s = 12a
test circ uits and waveforms same type as d.u.t. l v dd dri v er v gs r g - v ds d.u.t. + * d v/dt controlled by r g * sd co ntrolled by pulse period * d.u.t.-d vice under test - + peak dio d e recovery dv/dt test circuit p. w. pe riod d= v gs ( d river) i sd (d .u .t.) i fm , bod y diode forward current di/dt i rm bod y diode reverse current body diode recovery dv/dt body diode forward voltage drop v dd 10 v v ds (d.u.t. ) v gs = p.w. period peak dio d e recovery dv/dt waveforms
test circuits and waveforms(cont.) v ds 90 % 10% v gs t d(o n) t r t d(of f) t f s w itching test circuit switching waveforms 10 v ch arge q gs q gd q g v gs gate ch arg e test circuit gate charge waveform v dd t p time bv dss i as i d( t) v ds(t) unc l amped inductive switching test circuit unclamped inductive switching waveforms
ty pic al characteristics -55c 25 c 10 1 10 0 10 -1 24 6 810 gate-source voltage, v gs (v) tr ansfer characteristics no tes: 250s pulse test t c =2 5c top: v gs 15v 10v 8.0v 7.0v 6.5v 6.0v bo tt om: 5.5v 10 1 10 0 10 -1 10 0 10 1 d r ain-source voltage, v gs (v) on -resig n characteristics 150c no te s: 1.v ds = 50v 2 .250s pulse test
typic al characteristics drai n cu rrent, i d (a) thermal response, z jc (t)
t o - 220 mechanical drawing t o - 220 mechanical drawing it o-2 20 m echanical drawing
to-2 62 mechanical drawing to-2 63 mechanical drawing
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